| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 500BT-6 | BT thermistor, 500KOhm | distributor | - | 2 | -50°C | 200°C | 796 K |
| HYB514400BT-60 | 1M x 4-bit dynamic RAM, 60ns | Infineon-formely-Siemens | TSOP II | 20 | 0°C | 70°C | 976 K |
| KM416C1000BT-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1004BT-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
| KM416C1200BT-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1204BT-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
| KM416V1000BT-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1004BT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
| KM416V1200BT-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1204BT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
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