| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB514400BT-70 | 1M x 4-bit dynamic RAM, 70ns | Infineon-formely-Siemens | TSOP II | 20 | 0°C | 70°C | 976 K |
| KM416C1000BT-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1004BT-7 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
| KM416C1200BT-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1204BT-7 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
| KM416V1000BT-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1004BT-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
| KM416V1200BT-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1204BT-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
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