| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HMBT6427 | Emitter to base voltage:12V; 500mA NPN epitaxial planar transistor | distributor | SOT23 | 3 | - | - | 28 K |
| HMBT6429 | Emitter to base voltage:6V; 200mA NPN epitaxial planar transistor | distributor | SOT23 | 3 | - | - | 29 K |
| MMBT6427 | 40V; 500mA NPN surface mount darlington transistor. Ideal for medium power application and switching | distributor | - | 3 | -55°C | 150°C | 47 K |
| MMBT6427LT1 | 40 V, darlington transistor | distributor | - | 3 | -55°C | 150°C | 203 K |
| MMBT6427LT1 | Darlington transistor | Motorola | - | 3 | -55°C | 150°C | 249 K |
| MMBT6428LT1 | 50 V, amplifier transistor | distributor | - | 3 | -55°C | 150°C | 209 K |
| MMBT6428LT1 | Amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 300 K |
| MMBT6429LT1 | 45 V, amplifier transistor | distributor | - | 3 | -55°C | 150°C | 209 K |
| MMBT6429LT1 | Amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 300 K |
| SMBT6429 | NPN silicon transistor for AF input stages and driver application | Infineon-formely-Siemens | - | 3 | - | - | 176 K |
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