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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MMBTA42300 V, high voltage transistor NPN silicondistributorSOT3-55°C150°C57 K
MMBTA42300 V, high voltage transistor NPN silicondistributorSOT3-55°C150°C57 K
MMBTA63LT1Darlington transistorMotorola-3-55°C150°C156 K
MMBTA64LT1Darlington transistorMotorola-3-55°C150°C156 K
MMBTA70LT1General purpose transistorMotorola-3-55°C150°C434 K
MMBTA92LT1High voltage transistorMotorola-3-55°C150°C145 K
MMBTA93LT1High voltage transistorMotorola-3-55°C150°C145 K
MX29F200BTA-12Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memorydistributorTSOP48-40°C85°C720 K
MX29F200BTA-90Access time: 90ns; 2M-bit (256K x 8/128K x 16) CMOS flash memorydistributorTSOP48-40°C85°C720 K
WMBTA42NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--73 K
WMBTA92NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--71 K
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