| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB514400BTL-60 | 1M x 4-bit dynamic RAM, 60ns, low power | Infineon-formely-Siemens | TSOP II | 20 | 0°C | 70°C | 976 K |
| KM416C1000BTL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1200BTL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1200BTL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1200BTL-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1000BTL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| LM2612BTLX | 400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits | distributor | microSMD | 10 | -40°C | 85°C | 2 M |
| LM2614BTLX | 400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers | distributor | microSMD | 10 | -40°C | 85°C | 733 K |
| LM2614BTLX | 400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers | distributor | microSMD | 10 | -40°C | 85°C | 733 K |
| LM2618BTLX | 400mA Sub-miniature, High Efficiency, Synchronous PWM & PFM Programmable DC-DC Converter | distributor | microSMD | 10 | - | - | 428 K |
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