| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUL310 | High voltage fast-switching NPN power transistor, 1000V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 86 K |
| BUL310PI | High voltage fast-switching NPN power transistor, 1000V, 5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 86 K |
| BUL52A | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| BUL52B | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| BUL54A | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| BUL54B | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 18 K |
| BUL74A | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| BUL74B | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| BUL791 | 700 V, NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 873 K |
| BULD125KC | 600 V, NPN silicon transistor with integrated diode | distributor | - | 3 | -65°C | 150°C | 972 K |
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