| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUT11 | NPN switching transistor | Power-Innovations | - | - | - | - | 128 K |
| BUT11 | NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 22 K |
| BUT11A | NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 22 K |
| BUT11AF | Full pak high voltage NPN power transistor for isolated package applications | Motorola | - | 3 | -65°C | 150°C | 120 K |
| BUT33 | Switchmode series NPN silicon power darlington transistor with base-emitter speed-up diode | Motorola | - | 2 | -65°C | 200°C | 284 K |
| BUT34 | Switchmode series NPN silicon power darlington transistor with base-emitter speedup diode | Motorola | - | 2 | -65°C | 200°C | 287 K |
| BUT70 | HIGH POWER NPN SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 62 K |
| BUT90 | HIGH POWER NPN SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
| BUT92 | FAST-SWITCHING NPN POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 65 K |
| BUTW92 | HIGH CURRENT NPN SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 61 K |
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