| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUT11 | 850 V, NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 648 K |
| BUT11AF | NPN silicon diffused power transistor. For switching power circuits | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 70 K |
| BUT11APX-1200 | 1200 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 62 K |
| BUT11F | 850 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 106 K |
| BUT12 | NPN silicon diffused power transistor. For switching power circuits | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 65 K |
| BUT12A | NPN silicon diffused power transistor. For switching power circuits | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 65 K |
| BUT12AF | 1000 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 78 K |
| BUT12AF | NPN silicon diffused power transistor. For switching power circuits | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 71 K |
| BUT12F | 850 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 78 K |
| BUT56A | NPN epitaxial silicon transistor. High voltage switching use in horizontal deflection output stage. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 21 K |
| [1] [2] [3] 4 [5] [6] [7] |
|---|
