| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUT100 | HIGH POWER NPN SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 64 K |
| BUT11 | NPN switching transistor | Power-Innovations | - | - | - | - | 128 K |
| BUT11 | NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 22 K |
| BUT11A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
| BUT11A | NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 22 K |
| BUT11AF | Full pak high voltage NPN power transistor for isolated package applications | Motorola | - | 3 | -65°C | 150°C | 120 K |
| BUT11AF | NPN silicon diffused power transistor. For switching power circuits | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 70 K |
| BUT18A | Silicon diffused power transistors | Philips-Semiconductors | SOT78 | - | - | - | 67 K |
| BUT18AF | Silicon diffused power transistors | Philips-Semiconductors | SOT186 | - | - | - | 69 K |
| BUT18F | Silicon diffused power transistors | Philips-Semiconductors | SOT186 | - | - | - | 69 K |
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