| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| APT1001R1BVFR | 1000V, 11A power MOS V | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 70 K |
| APT10086BVFR | 1000V, 13A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 68 K |
| APT10M19BVFR | 100V, 75A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 74 K |
| APT10M25BVFR | 100V, 75A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 69 K |
| APT20M38BVFR | 200V, 67A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 76 K |
| APT20M45BVFR | 200V, 56A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 94 K |
| APT30M70BVFR | 300V, 48A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 66 K |
| APT30M85BVFR | 300V, 40A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 69 K |
| M5M29GT160BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
| M5M29GT161BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
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