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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BDX538Ampere darlington complementary silicon power transistordistributor-3-65°C150°C187 K
BDX53NPN epitaxial silicon transistor. Collector-base voltage 45V. Collector-emitter voltage 45V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--21 K
BDX53A8Ampere darlington complementary silicon power transistordistributor-3-65°C150°C187 K
BDX53ANPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--21 K
BDX53BNPN transistor for power liner and switching applications, 80V, 8AFairchild-Semiconductor-3-65°C150°C41 K
BDX53BComplementary silicon power darlington transistorSGS-Thomson-Microelectronics-3----
BDX53BNPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--21 K
BDX53CNPN transistor for power liner and switching applications, 100V, 8AFairchild-Semiconductor-3-65°C150°C41 K
BDX53CComplementary silicon power darlington transistorSGS-Thomson-Microelectronics-3----
BDX53CNPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--21 K
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