| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUT11 | NPN Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 42 K |
| BUT11 | 850 V, NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 648 K |
| BUT11A | NPN Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 42 K |
| BUT11A | NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 22 K |
| BUT11AF | NPN Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 47 K |
| BUT11AF | NPN Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 47 K |
| BUT11AF | NPN silicon diffused power transistor. For switching power circuits | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 70 K |
| BUT11APX-1200 | 1200 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 62 K |
| BUT11F | 850 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 106 K |
| BUT11XI | 1000 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 69 K |
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