Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3P | 3 | -55°C | 150°C | 227 K |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO247 | 3 | -55°C | 150°C | 227 K |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 227 K |
EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO247 | 3 | -55°C | 150°C | 227 K |
EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3P | 3 | -55°C | 150°C | 227 K |
MT48LC4M32LFFC-10 | 1Meg x 32 x 4 banks; 100MHz synchronous DRAM | distributor | FBGA | 90 | 0°C | 70°C | 1 M |
MT48LC8M16LFFC-10 | 2Meg x 16 x 4 banks; 100MHz synchronous DRAM | distributor | FBGA | 90 | 0°C | 70°C | 1 M |
MT48V4M32LFFC-10 | 1Meg x 32 x 4 banks; 100MHz synchronous DRAM | distributor | FBGA | 90 | 0°C | 70°C | 1 M |
MT48V8M16LFFC-10 | 2Meg x 16 x 4 banks; 100MHz synchronous DRAM | distributor | FBGA | 90 | 0°C | 70°C | 1 M |
REC-1005SRWL | 10W DC/DC converter with 10V input, 5/2000mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
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