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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EC-10N16N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO3P3-55°C150°C227 K
EC-10N16N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO2473-55°C150°C227 K
EC-10N16N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO33-55°C150°C227 K
EC-10P16P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO2473-55°C150°C227 K
EC-10P16P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO3P3-55°C150°C227 K
MT48LC4M32LFFC-101Meg x 32 x 4 banks; 100MHz synchronous DRAMdistributorFBGA900°C70°C1 M
MT48LC8M16LFFC-102Meg x 16 x 4 banks; 100MHz synchronous DRAMdistributorFBGA900°C70°C1 M
MT48V4M32LFFC-101Meg x 32 x 4 banks; 100MHz synchronous DRAMdistributorFBGA900°C70°C1 M
MT48V8M16LFFC-102Meg x 16 x 4 banks; 100MHz synchronous DRAMdistributorFBGA900°C70°C1 M
REC-1005SRWL10W DC/DC converter with 10V input, 5/2000mA outputdistributorDIL6-25°C70°C82 K
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