Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO247 | 3 | -55°C | 150°C | 227 K |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 227 K |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3P | 3 | -55°C | 150°C | 227 K |
EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 227 K |
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 227 K |
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3P | 3 | -55°C | 150°C | 227 K |
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO247 | 3 | -55°C | 150°C | 227 K |
GAL16LV8C-10LJ | Low voltage E2CMOS PLD generic array logic, 10ns | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 70°C | 338 K |
PIC-1018SMB | Infrared receiver module. High immunity against noise. | distributor | - | 3 | -10°C | 60°C | 204 K |
PIC-1023SMB | Infrared receiver module. High immunity against noise. | distributor | - | 3 | -10°C | 60°C | 221 K |
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