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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4E640812C-TC-58M x 8bit CMOS dynamic RAM with extended data out, 50nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E640812C-TC-68M x 8bit CMOS dynamic RAM with extended data out, 60nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E640812C-TCL-58M x 8bit CMOS dynamic RAM with extended data out, 50nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E640812C-TCL-68M x 8bit CMOS dynamic RAM with extended data out, 60nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812C-TC-58M x 8bit CMOS dynamic RAM with extended data out, 50nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812C-TCL-58M x 8bit CMOS dynamic RAM with extended data out, 50nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812C-TCL-58M x 8bit CMOS dynamic RAM with extended data out, 50nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812C-TCL-68M x 8bit CMOS dynamic RAM with extended data out, 60nsSamsung-ElectronicTSOP II320°C70°C416 K
K4S643232C-TC55512K x 32bit x 4 banks synchronous DRAM LVTTL, 183MHzSamsung-ElectronicTSOP II860°C70°C1 M
K4S643232C-TL55512K x 32bit x 4 banks synchronous DRAM LVTTL, 183MHzSamsung-ElectronicTSOP II860°C70°C1 M
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