Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E640812C-TC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812C-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812C-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812C-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E660812C-TC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E660812C-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E660812C-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E660812C-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4S643232C-TC55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
K4S643232C-TL55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
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