| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E640812C-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E640812C-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812C-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812C-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4S560832C-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K6R1008C1C-TI10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung-Electronic | TSOP II | 32 | -40°C | 85°C | 131 K |
| K6R1008C1C-TI15 | 128K x 8 high speed static RAM, 5V operating, 15ns | Samsung-Electronic | TSOP II | 32 | -40°C | 85°C | 131 K |
| << [138] [139] [140] [141] [142] 143 [144] [145] [146] [147] [148] >> |
|---|
