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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4E661612C-TL504M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low powerSamsung-ElectronicTSOP II500°C70°C884 K
K4S640832C-TC/L102M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 66MHzSamsung-ElectronicTSOP II540°C70°C130 K
K4S640832C-TC/L1H2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHzSamsung-ElectronicTSOP II540°C70°C130 K
K4S640832C-TC/L1L2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHzSamsung-ElectronicTSOP II540°C70°C130 K
K4S640832C-TC/L702M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHzSamsung-ElectronicTSOP II540°C70°C130 K
K4S640832C-TC/L802M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHzSamsung-ElectronicTSOP II540°C70°C130 K
K6R1008C1C-TC10128K x 8 high speed static RAM, 5V operating, 10nsSamsung-ElectronicTSOP II320°C70°C131 K
K6R1008C1C-TC12128K x 8 high speed static RAM, 5V operating, 12nsSamsung-ElectronicTSOP II320°C70°C131 K
K6R1008C1C-TC15128K x 8 high speed static RAM, 5V operating, 15nsSamsung-ElectronicTSOP II320°C70°C131 K
K6R1008C1C-TI12128K x 8 high speed static RAM, 5V operating, 12nsSamsung-ElectronicTSOP II32-40°C85°C131 K
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