Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E661612C-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 884 K |
K4S640832C-TC/L10 | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 66MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
K4S640832C-TC/L1H | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
K4S640832C-TC/L1L | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
K4S640832C-TC/L70 | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
K4S640832C-TC/L80 | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
K6R1008C1C-TC10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 131 K |
K6R1008C1C-TC12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 131 K |
K6R1008C1C-TC15 | 128K x 8 high speed static RAM, 5V operating, 15ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 131 K |
K6R1008C1C-TI12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung-Electronic | TSOP II | 32 | -40°C | 85°C | 131 K |
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