| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S280432C-TC/L1H | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
| K4S280432C-TC/L1L | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
| K4S280432C-TC/L75 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
| K4S280832C-TC/L1H | 4M x 8bit x 4 banks synchronous DRAM. 100 MHz max freq (CL=2). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
| K4S280832C-TC/L1L | 4M x 8bit x 4 banks synchronous DRAM. 100 MHz max freq (CL=3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
| K4S280832C-TC/L75 | 4M x 8bit x 4 banks synchronous DRAM. 133 MHz max freq (CL=3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
| PA28F002BC-T120 | 2-Mbit (256K x 8) boot block flash memory. Access speed 120 ns | Intel-Corporation | PSOP | 44 | 0°C | 70°C | 455 K |
| PA28F002BC-T80 | 2-Mbit (256K x 8) boot block flash memory. Access speed 80 ns | Intel-Corporation | PSOP | 44 | 0°C | 70°C | 455 K |
| R1221N15AC-TR | Step-down DC/DC converter with voltage detector. Output voltage (Vout) 1.5V. Detector threshold (-Vdet) 3.0V. Oscillator frequency 300kHz | distributor | - | 6 | -40°C | 85°C | 218 K |
| R1221N16AC-TR | Step-down DC/DC converter with voltage detector. Output voltage (Vout) 1.6V. Detector threshold (-Vdet) 3.0V. Oscillator frequency 300kHz | distributor | - | 6 | -40°C | 85°C | 218 K |
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