| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ITC1000 | 1000 W, 50 V, 1030 MHz common base transistor | distributor | 55SW | 3 | - | - | 50 K |
| KM416C1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJ-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJ-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CT-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1004CT-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1004CTL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1004CTL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
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