Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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B125C1000 | 300 V, 1 A glass passivated bridge rectifier | distributor | - | 4 | -40°C | 125°C | 21 K |
B250C1000 | 600 V, 1 A glass passivated bridge rectifier | distributor | - | 4 | -40°C | 125°C | 21 K |
B40C1000 | 100 V, 1 A glass passivated bridge rectifier | distributor | - | 4 | -40°C | 125°C | 21 K |
B80C1000 | 200 V, 1 A glass passivated bridge rectifier | distributor | - | 4 | -40°C | 125°C | 21 K |
BZV58C100 | 100 V, 12 mA, 5 W glass passivated zener diode | distributor | - | 2 | -65°C | 175°C | 43 K |
BZY97C100GP | 100 V, 5 mA, 1.5 W zener diode | distributor | - | 2 | -55°C | 175°C | 74 K |
KM416C1004BJ-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 2 M |
KM416C1004BJ-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 2 M |
KM416C1004BT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
KM416C1004BT-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
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