| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KBPC1000 | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. | distributor | - | 4 | -55°C | 125°C | 124 K |
| KBPC1000G | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. | distributor | - | 4 | -55°C | 150°C | 125 K |
| KBPC1001 | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. | distributor | - | 4 | -55°C | 125°C | 124 K |
| KBPC1002 | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. | distributor | - | 4 | -55°C | 125°C | 124 K |
| KBPC1004 | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V. | distributor | - | 4 | -55°C | 125°C | 124 K |
| KBPC1006 | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. | distributor | - | 4 | -55°C | 125°C | 124 K |
| KBPC1008 | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. | distributor | - | 4 | -55°C | 125°C | 124 K |
| KM416C1004CJ-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416C1004CJ-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
| KM416C1004CT-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
| KM416C1004CT-L6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
| << [171] [172] [173] [174] [175] 176 [177] [178] |
|---|
