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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416C1200BJ-51M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50nsSamsung-ElectronicSOJ420°C70°C84 K
KM416C1200BJ-61M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60nsSamsung-ElectronicSOJ420°C70°C84 K
KM416C1200BJ-71M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70nsSamsung-ElectronicSOJ420°C70°C84 K
KM416C1200BT-51M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50nsSamsung-ElectronicTSOP440°C70°C84 K
KM416C1200BT-61M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60nsSamsung-ElectronicTSOP440°C70°C84 K
KM416C1200BT-71M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70nsSamsung-ElectronicTSOP440°C70°C84 K
KM416C1200BTL-51M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50nsSamsung-ElectronicTSOP440°C70°C84 K
KM416C1200BTL-61M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60nsSamsung-ElectronicTSOP440°C70°C84 K
KM416C1200BTL-71M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70nsSamsung-ElectronicTSOP440°C70°C84 K
SS1C1200Special SIP reed relay. Nominal voltage 12 VDC. Contact form 1C SPDT-CO.distributorSIP5-40°C85°C59 K
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