| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 74ALVC132 | Low Voltage Quad 2-Input NAND Gate with Schmitt Trigger Inputs and 3.6V Tolerant Inputs and Outputs | Fairchild-Semiconductor | - | - | - | - | 73 K |
| CY7C1316V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1316V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1316V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1318V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1318V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1320V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1320V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| FJC1308 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 51 K |
| FJC1386 | Low Saturation Transistor Medium Power Amplifier | Fairchild-Semiconductor | - | - | - | - | 51 K |
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