Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AIC1580CN | Single PWM power regulator with shutdown | distributor | PDIP | 8 | 0°C | 70°C | 296 K |
AIC1580CS | Single PWM power regulator with shutdown | distributor | SOIC | 8 | 0°C | 70°C | 296 K |
AIC1580LCN | Single PWM power regulator with shutdown | distributor | PDIP | 8 | 0°C | 70°C | 296 K |
AIC1580LCS | Single PWM power regulator with shutdown | distributor | SOIC | 8 | 0°C | 70°C | 296 K |
ESMD-C15TR | 10-2000 MHz, surface mount mixer, RF power 50mW | M-A-COM---manufacturer-of-RF | SM | 5 | -55°C | 100°C | 63 K |
IRG4BC15MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A | International-Rectifier | - | 3 | -55°C | 150°C | 256 K |
IRG4BC15UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | - | 3 | -55°C | 150°C | 255 K |
IRG4BC15UD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 210 K |
IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 210 K |
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