Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K6T4008C1B-DB55 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, LL-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
K6T4008C1B-DB70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
K6T4008C1B-DL55 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, L-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
K6T4008C1B-DL70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, L-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
K6T4008C1B-GL55 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, L-power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 171 K |
K6T4008C1B-MF55 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 171 K |
K6T4008C1B-MF70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 171 K |
K6T4008C1B-VF70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-power | Samsung-Electronic | - | 32 | -40°C | 85°C | 171 K |
SC28L194C1BE | Quad UART for 3.3 V and 5 V supply voltage | Philips-Semiconductors | SOT315 | - | - | - | 294 K |
SCC2692AC1B44 | Dual asynchronous receiver/transmitter (DUART) | Philips-Semiconductors | SOT307 | - | - | - | 209 K |
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