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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FAR-C1CB-16000-K01-RPiezoelectric resonatorFujitsu-MicroelectronisChip2-30°C85°C305 K
FAR-C1CB-16000-M01-RPiezoelectric resonatorFujitsu-MicroelectronisChip2-30°C85°C305 K
K6T4008C1C-DB70512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-powerSamsung-ElectronicDIP320°C70°C125 K
K6T4008C1C-DL55512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, L-powerSamsung-ElectronicDIP320°C70°C125 K
K6T4008C1C-DL70512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, L-powerSamsung-ElectronicDIP320°C70°C125 K
K6T4008C1C-GB55512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, LL-powerSamsung-ElectronicSOP320°C70°C125 K
K6T4008C1C-GB70512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-powerSamsung-ElectronicSOP320°C70°C125 K
K6T4008C1C-GL55512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, L-powerSamsung-ElectronicSOP320°C70°C125 K
K6T4008C1C-GP70512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, L-powerSamsung-ElectronicSOP32-40°C85°C125 K
K6T4008C1C-MF55512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, LL-powerSamsung-Electronic-32-40°C85°C125 K
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