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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFBC20LHEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2AInternational-Rectifier-3-55°C150°C355 K
IRFIBC20GHEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 1.7 AInternational-Rectifier-3-55°C150°C167 K
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C222 K
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational-RectifierDDPak3-55°C150°C222 K
IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C138 K
IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-RectifierDDPak3-55°C150°C162 K
RC204Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 400V, max RMS bridge input voltage 280V, max DC blocking voltage 400V. Max average forward rectified current 2.0A at Ta=25degC.distributor-4-55°C125°C20 K
RC205Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 2.0A at Ta=25degC.distributor-4-55°C125°C20 K
RC206Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 2.0A at Ta=25degC.distributor-4-55°C125°C20 K
RC207Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 2.0A at Ta=25degC.distributor-4-55°C125°C20 K
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