| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| C20T03QL | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
| C20T03QL-11A | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
| C20T03QLH | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
| C20T03QLH-11A | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
| C20T04Q | 40 V, diode | distributor | TO | 3 | -40°C | 150°C | 29 K |
| C20T04Q-11A | 40 V, diode | distributor | TO | 3 | -40°C | 150°C | 29 K |
| IRG4BC20W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | International-Rectifier | - | 3 | -55°C | 150°C | 130 K |
| IRG4BC20W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 152 K |
| IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 264 K |
| IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 264 K |
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