Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BC212 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 2 | -55°C | 150°C | 62 K |
BC212L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 62 K |
BC213 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 88 K |
BC213L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 88 K |
BC214 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 154 K |
BC214L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 154 K |
EC21QS06 | 60 V, diode | distributor | SM | 2 | -40°C | 150°C | 29 K |
EC21QS09 | 90 V, diode | distributor | SM | 2 | -40°C | 150°C | 29 K |
EC21QS10 | 100 V, diode | distributor | SM | 2 | -40°C | 150°C | 29 K |
FCC21-08IO | 1200V HiPerFET power MOSFET | distributor | - | 5 | -55°C | 150°C | 41 K |
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