Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GBPC25005 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | GBPC | 4 | -50°C | 150°C | 38 K |
GBPC25005W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
GBPC2502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | GBPC | 4 | -50°C | 150°C | 38 K |
GBPC2504 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | GBPC | 4 | -50°C | 150°C | 38 K |
GBPC2506 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | GBPC | 4 | -50°C | 150°C | 38 K |
GBPC2508 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | GBPC | 4 | -50°C | 150°C | 38 K |
MCC250-18IO1 | 1800V thyristor modules thyristor/diode module | distributor | - | 7 | -40°C | 140°C | 162 K |
TC54VC2501ECBTR | Voltage detector, CMOS output, 2.5V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
TC54VC2501ECTTR | Voltage detector, CMOS output, 2.5V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
TC54VC2501EMBTR | Voltage detector, CMOS output, 2.5V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
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