Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GBPC2501W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
GBPC2502W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
GBPC2504W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
GBPC2506W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
GBPC2508W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
TC54VC2501ECB | Voltage detector. Detected voltage 2.5V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC2501EMB | Voltage detector. Detected voltage 2.5V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC2501EZB | Voltage detector. Detected voltage 2.5V. Output form: CMOS output . Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC2502ECB | Voltage detector. Detected voltage 2.5V. Output form: CMOS output. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC2502EMB | Voltage detector. Detected voltage 2.5V. Output form: CMOS output. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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