| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256APC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | PDIP | 28 | 0°C | 70°C | 41 K |
| 28C256APC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | PDIP | 28 | 0°C | 70°C | 41 K |
| 28C256APC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | 0°C | 70°C | 41 K |
| 28C256APC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | 0°C | 70°C | 41 K |
| 28C256API-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
| 28C256API-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
| 28C256API-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
| 28C256API-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | -40°C | 85°C | 41 K |
| 28C256APM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
| TU25C256SI | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. | distributor | SOIC | 8 | -40°C | 85°C | 73 K |
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