| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256AJI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PLCC | 32 | -40°C | 85°C | 41 K |
| 28C256AJM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | PLCC | 32 | -55°C | 125°C | 41 K |
| 28C256AJM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | PLCC | 32 | -55°C | 125°C | 41 K |
| 28C256AJM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PLCC | 32 | -55°C | 125°C | 41 K |
| 28C256AJM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PLCC | 32 | -55°C | 125°C | 41 K |
| 28C256ASC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | SOIC | 28 | -40°C | 85°C | 41 K |
| << [157] [158] [159] [160] [161] 162 [163] [164] [165] [166] [167] >> |
|---|
