| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ATC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28C256ATI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28C256ATM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28C256ATM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28C256ATM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| EPM3512AFC256-7 | Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 7ns | distributor | FBGA | 256 | 0°C | 90°C | 649 K |
| << [159] [160] [161] [162] [163] 164 [165] [166] [167] [168] [169] >> |
|---|
