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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS4C256K16E0-35JC5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ400°C70°C644 K
AS4C256K16E0-50JC5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ400°C70°C644 K
AS4C256K16E0-50TC5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access timeAlliance-Semiconductor-CorporationTSOPII440°C70°C644 K
AS4C256K16F0-25JC5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ400°C70°C521 K
HN58C256AFP-10265K EEPROM (32-kword x 8-bit), 100ns access timedistributorplastic SOP280°C70°C126 K
HN58C256AFP-85265K EEPROM (32-kword x 8-bit), 85ns access timedistributorplastic SOP280°C70°C126 K
HN58C256AP-10265K EEPROM (32-kword x 8-bit), 100ns access timedistributorplastic DIP280°C70°C126 K
HN58C256AP-85265K EEPROM (32-kword x 8-bit), 85ns access timedistributorplastic DIP280°C70°C126 K
HN58C256AT-10265K EEPROM (32-kword x 8-bit), 100ns access timedistributorplastic TSOP280°C70°C126 K
HN58C256AT-85265K EEPROM (32-kword x 8-bit), 85ns access timedistributorplastic TSOP280°C70°C126 K
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