Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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C30T03QL | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
C30T03QL-11A | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
C30T03QLH | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
C30T03QLH-11A | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
IRG4PC30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 178 K |
IRG4PC30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 178 K |
IRG4PC30S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 120 K |
IRG4PC30U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 145 K |
IRG4PC30UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 211 K |
IRG4PC30W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 123 K |
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