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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
C30T03QL30 V, diodedistributorTO3-40°C150°C30 K
C30T03QL-11A30 V, diodedistributorTO3-40°C150°C30 K
C30T03QLH30 V, diodedistributorTO3-40°C150°C30 K
C30T03QLH-11A30 V, diodedistributorTO3-40°C150°C30 K
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-Rectifier-3-55°C150°C178 K
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-Rectifier-3-55°C150°C178 K
IRG4PC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18AInternational-Rectifier-3-55°C150°C120 K
IRG4PC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C145 K
IRG4PC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C211 K
IRG4PC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C123 K
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