Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SC3379 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 150 K |
BC337 | 625mW NPN silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 140 K |
BC337 | NPN silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 163 K |
BC337 | Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current Ic = 800mA. | distributor | - | 3 | 0°C | 150°C | 46 K |
BC337-16 | NPN silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 163 K |
BC337-25 | NPN silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 163 K |
BC337-25 | SMALL SIGNAL NPN TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 59 K |
HBC337 | 5V 800mA NPN epitaxial planar transistor for driver and output-stage of audio amplifier | distributor | - | 3 | - | - | 37 K |
HMC337 | MMIC sub- harmonically pumped mixer 17 - 25 GHz | distributor | - | - | -55°C | 125°C | 267 K |
HN/BC337 | 50 V, NPN silicon expitaxial planar transistor | distributor | - | 3 | - | - | 343 K |
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