| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM44C4100CKL-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44C4100CS-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44C4103CK-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4103CK-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4103CKL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4103CKL-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4103CS-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4103CS-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4103CSL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4103CSL-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
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