| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CY7C419–10AC | 256 x 9 asynchronous FIFO, 10 ns | Cypress-Semiconductor | TQFP | 32 | 0°C | 70°C | 508 K |
| HC4DHTM-AC4110/120 | HC-relay. Miniature relay for wide applications. 4 form C. Coil voltage 110/120 V AC. Top mounting. Bifurcated contact type. | distributor | - | 14 | -50°C | 70°C | 694 K |
| KM44C4105CK-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CK-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CKL-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CKL-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CS-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
| KM44C4105CS-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
| KM44C4105CSL-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
| KM44C4105CSL-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
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