| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC4596E | Silicon epitaxial plannar transistor. High frequency, NPN high power | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| KS88C4504 | 8-bit single-chip CMOS microcontroller. | Samsung-Electronic | - | 80 | -40°C | 85°C | 293 K |
| MGFC45V3436A | 3.4-3.6GHz band 32W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 213 K |
| MGFC45V3642A | 3.6-4.2GHz band 32W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 174 K |
| MGFC45V4450A | 4.4-5.0 GHz band 32W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 140 K |
| MGFC45V5053A | 5.05-5.25GHz band 32W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 16 K |
| MGFC45V5964A | 5.9-6.4 GHz band 32W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 17 K |
| MGFC45V6472A | 6.4-7.2GHz band 32W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 41 K |
| UTCMC4558 | Dual operational amplifier | distributor | SOP | 8 | - | - | 110 K |
| UTCMC4558 | Dual operational amplifier | distributor | DIP | 8 | - | - | 110 K |
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