| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ESMD-C50H | 80-2500 MHz, surface mount mixer | M-A-COM---manufacturer-of-RF | SM | 6 | -40°C | 85°C | 143 K |
| ESMD-C50HTR | 80-2500 MHz, surface mount mixer | M-A-COM---manufacturer-of-RF | SM | 6 | -40°C | 85°C | 143 K |
| GMS81C5024 | ROM/RAM size:24 Kb/448 bytes, 4 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller | distributor | PLCC | 44 | 0°C | 70°C | 1 M |
| GMS81C5024 | ROM/RAM size:24 Kb/448 bytes, 4 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller | distributor | QFP | 44 | 0°C | 70°C | 1 M |
| GMS81C5032 | ROM/RAM size:32 Kb/448 bytes, 4 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller | distributor | QFP | 44 | 0°C | 70°C | 1 M |
| IRFPC50A | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.58 Ohm, ID = 11 A | International-Rectifier | - | 3 | -55°C | 150°C | 95 K |
| IRG4PC50K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.84V @ VGE = 15V, IC = 30A | International-Rectifier | - | 3 | -55°C | 150°C | 115 K |
| IRG4PC50S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.28V @ VGE = 15V, IC = 41A | International-Rectifier | - | 3 | -55°C | 150°C | 164 K |
| IRG4PC50U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRG4PC50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 213 K |
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