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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DS83C520-ECLEPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHzDallas-SemiconductorTQFP440°C70°C1 M
DS83C520-ENLEPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHzDallas-SemiconductorTQFP44-40°C85°C1 M
DS83C520-MNLEPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHzDallas-SemiconductorPDIP40-40°C85°C1 M
DS83C520-QCLEPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHzDallas-SemiconductorPLCC440°C70°C1 M
DS83C520-QNLEPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHzDallas-SemiconductorPLCC44-40°C85°C1 M
DS87C520-MNLEPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHzDallas-SemiconductorPDIP40-40°C85°C1 M
TC54VC5201EMBVoltage detector. Detected voltage 5.2V. Output form: CMOS output. Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VC5201EZBVoltage detector. Detected voltage 5.2V. Output form: CMOS output . Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VC5202EMBVoltage detector. Detected voltage 5.2V. Output form: CMOS output. Tolerance +-2.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VC5202EZBVoltage detector. Detected voltage 5.2V. Output form: CMOS output . Tolerance +-2.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
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