Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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DS83C520-ECL | EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz | Dallas-Semiconductor | TQFP | 44 | 0°C | 70°C | 1 M |
DS83C520-ENL | EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz | Dallas-Semiconductor | TQFP | 44 | -40°C | 85°C | 1 M |
DS83C520-MNL | EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz | Dallas-Semiconductor | PDIP | 40 | -40°C | 85°C | 1 M |
DS83C520-QCL | EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz | Dallas-Semiconductor | PLCC | 44 | 0°C | 70°C | 1 M |
DS83C520-QNL | EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz | Dallas-Semiconductor | PLCC | 44 | -40°C | 85°C | 1 M |
DS87C520-MNL | EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz | Dallas-Semiconductor | PDIP | 40 | -40°C | 85°C | 1 M |
TC54VC5201EMB | Voltage detector. Detected voltage 5.2V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC5201EZB | Voltage detector. Detected voltage 5.2V. Output form: CMOS output . Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC5202EMB | Voltage detector. Detected voltage 5.2V. Output form: CMOS output. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC5202EZB | Voltage detector. Detected voltage 5.2V. Output form: CMOS output . Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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