| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FC601 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2105A | 5 | - | - | 83 K |
| FDC602P | P-Channel 2.5V Specified PowerTrench ® MOSFET [Advanced] | Fairchild-Semiconductor | SOIC | 6 | - | - | 216 K |
| FDC604P | P-Channel 1.8V Specified PowerTrench ® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 359 K |
| GBPC6005 | Glass Passivated Single-phase Bridge Rectifier | General-Semiconductor | GBPC | - | - | - | 84 K |
| HC6094 | ADSL Analog Front End Chip | Intersil-Corporation | - | - | - | - | 51 K |
| SHC605AU | High-Speed Operational Track-And-Hold Amplifier | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 200 K |
| UPD488448FB-C60-53-DQ1 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD488448FB-C60-53-DQ2 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD488448FF-C60-53-DQ1 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD488448FF-C60-53-DQ2 | 128M-bit(256K-word x 16-bit x 32-bank)Direct Rambus(TM) DRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
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