| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC636 | PNP silicon high current transistor | Motorola | - | 3 | -55°C | 150°C | 116 K |
| BC637 | NPN silicon high current transistor | Motorola | - | 3 | -55°C | 150°C | 116 K |
| BC638 | PNP silicon high current transistor | Motorola | - | 3 | -55°C | 150°C | 116 K |
| ESAC63-004 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 71 K |
| ESAC63M-004 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 75 K |
| NDC632P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 254 K |
| PIC635 | Power Integrated Circuit | Microsemi-Corporation | - | - | - | - | 215 K |
| PIC636 | Power Integrated Circuit | Microsemi-Corporation | - | - | - | - | 215 K |
| PIC636 | Power Integrated Circuit | Microsemi-Corporation | - | - | - | - | 215 K |
| PIC637 | Power Integrated Circuit | Microsemi-Corporation | - | - | - | - | 215 K |
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