| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC741 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 123 K |
| HMS91C7432 | 3.3 V , CMOS IC | distributor | SOP | 20 | -40°C | 85°C | 195 K |
| HMS91C7432 | 3.3 V , CMOS IC | distributor | DIP | 20 | -40°C | 85°C | 195 K |
| IRC740 | HEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm | International-Rectifier | - | 5 | -55°C | 150°C | 221 K |
| S3C7424 | Single-chip CMOS microcontroller. 256 x 4-bit RAM, 4,096 x 8-bit ROM, 1.8 V to 5.5 V. | Samsung-Electronic | - | 30 | -40°C | 85°C | 345 K |
| S3C7424 | Single-chip CMOS microcontroller. 256 x 4-bit RAM, 4,096 x 8-bit ROM, 1.8 V to 5.5 V | Samsung-Electronic | - | 28 | -40°C | 85°C | 345 K |
| S3C7434 | Single-chip CMOS microcontroller. 256 x 4-bit RAM, 4,096 x 8-bit ROM, 2.5 V to 5.5 V. | Samsung-Electronic | - | 42 | -40°C | 85°C | 345 K |
| S3C7434 | Single-chip CMOS microcontroller. 256 x 4-bit RAM, 4,096 x 8-bit ROM, 2.5 V to 5.5 V. | Samsung-Electronic | - | 44 | -40°C | 85°C | 345 K |
| TC74AC04P | CMOS digital integrated circuit | Toshiba | DIP | 14 | -40°C | 85°C | 240 K |
| TC74HC257AF | CMOS digital integrated circuit | Toshiba | SOP | 16 | -40°C | 85°C | 250 K |
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