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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GM71C17800CLT-5CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low powerdistributorTSOP II280°C70°C92 K
GM71C17800CLT-6CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low powerdistributorTSOP II280°C70°C92 K
GM71C17800CLT-7CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low powerdistributorTSOP II280°C70°C92 K
GM71CS17800CLT-6CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low powerdistributorTSOP II280°C70°C92 K
GM71CS17800CLT-7CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low powerdistributorTSOP II280°C70°C92 K
HM514400CLTT-61,048,576-word x 4-bit dynamic random access memory, 60nsdistributorTSOP II200°C70°C235 K
HM514400CLTT-71,048,576-word x 4-bit dynamic random access memory, 70nsdistributorTSOP II200°C70°C235 K
HM514400CLTT-81,048,576-word x 4-bit dynamic random access memory, 80nsdistributorTSOP II200°C70°C235 K
KM68257CLTG-1532Kx8 bit high speed static RAM (5V operating), 15nsSamsung-ElectronicTSOP I280°C70°C190 K
KM68257CLTG-2032Kx8 bit high speed static RAM (5V operating), 20nsSamsung-ElectronicTSOP I280°C70°C190 K
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