| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CLT3-4BT6 | CURRENT LIMITED OVER-VOLTAGE PROTECTED QUAD DIGITAL TERMINATION | SGS-Thomson-Microelectronics | - | - | - | - | 99 K |
| CLT3-4BT6-TR | CURRENT LIMITED OVER-VOLTAGE PROTECTED QUAD DIGITAL TERMINATION | SGS-Thomson-Microelectronics | - | - | - | - | 99 K |
| GM72V66841CLT-10K | 2097152 word x 8 bit x 4 bank synchronous dynamic RAM | distributor | TSOP II | 54 | 0°C | 70°C | 592 K |
| GM72V66841CLT-7J | 2097152 word x 8 bit x 4 bank synchronous dynamic RAM | distributor | TSOP II | 54 | 0°C | 70°C | 592 K |
| GM72V66841CLT-7K | 2097152 word x 8 bit x 4 bank synchronous dynamic RAM | distributor | TSOP II | 54 | 0°C | 70°C | 592 K |
| GM72V66841CLT-8 | 2097152 word x 8 bit x 4 bank synchronous dynamic RAM | distributor | TSOP II | 54 | 0°C | 70°C | 592 K |
| KM684000CLT-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | - | 32 | 0°C | 70°C | 169 K |
| KM684000CLT-7L | 512Kx8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | - | 32 | 0°C | 70°C | 169 K |
| KM684000CLTI-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | - | 32 | -40°C | 85°C | 169 K |
| KM684000CLTI-7L | 512Kx8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | - | 32 | -40°C | 85°C | 169 K |
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