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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM1000HA-28H1000 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C54 K
CM1000HA-28H1000 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C54 K
CM100DY-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C47 K
CM100DY-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C48 K
CM100E3U-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C50 K
CM100TU-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C56 K
CM100TU-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C50 K
CM150DY-12H150 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C47 K
CM150E3U-12H150 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C50 K
CM150TU-12H150 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C51 K
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