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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM100DY-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C47 K
CM100DY-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C48 K
CM100E3U-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C50 K
CM100TF-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C56 K
CM100TF-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C53 K
CM100TF-28H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-19-40°C150°C53 K
CM100TU-24H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C50 K
CM10MD-12H10A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C158 K
CM10MD-24H10A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C164 K
CM10MD1-12H10A IGBT module for medium power switching use, flat-base type, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C144 K
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