Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ACT-F128K32N-060P3Q | High speed 4 Megabit FLASH multichip module. Speed 60ns. | distributor | PGA | 66 | -55°C | 125°C | 201 K |
ACT-F128K32N-060P7Q | High speed 4 Megabit FLASH multichip module. Speed 60ns. | distributor | PGA | 66 | -55°C | 125°C | 201 K |
ACT-F128K32N-070P3Q | High speed 4 Megabit FLASH multichip module. Speed 70ns. | distributor | PGA | 66 | -55°C | 125°C | 201 K |
ACT-F128K32N-070P7Q | High speed 4 Megabit FLASH multichip module. Speed 70ns. | distributor | PGA | 66 | -55°C | 125°C | 201 K |
ACT-F128K32N-090P3Q | High speed 4 Megabit FLASH multichip module. Speed 90ns. | distributor | PGA | 66 | -55°C | 125°C | 201 K |
ACT-F128K32N-120P3Q | High speed 4 Megabit FLASH multichip module. Speed 120ns. | distributor | PGA | 66 | -55°C | 125°C | 201 K |
ACT-F128K32N-150P3Q | High speed 4 Megabit FLASH multichip module. Speed 150ns. | distributor | PGA | 66 | -55°C | 125°C | 201 K |
KM432S2030CT-F10 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
KM432S2030CT-F6 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
KM432S2030CT-F7 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
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